Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2015165543
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a technology which inhibits a short circuit caused by a residual metal.SOLUTION: A semiconductor device 1 includes: a semiconductor substrate 10 on which an IGBT is formed; a gate electrode 20 of the IGBT which is formed on the semiconductor substrate 10; an insulation film 50 which covers the gate electrode 20 and the semiconductor substrate 10 from above; and an emitter electrode 30 formed on the insulation film 50. The semiconductor device 1 includes gate wiring 40 which is formed on the insulation film 50, separated from the emitter electrode 30, and contacts with the gate electrode 20. A first step part 54 is formed on an area of an upper surface of the insulation film 50 which is located between a portion located on the gate electrode 20 and a portion located on the semiconductor substrate 10. The emitter electrode 30 covers the first step part 54 and the gate wiring 40 does not cover the first step part 54.
Inventors:
YASUDA YOSHIFUMI
Application Number:
JP2014040416A
Publication Date:
September 17, 2015
Filing Date:
March 03, 2014
Export Citation:
Assignee:
TOYOTA MOTOR CORP
International Classes:
H01L29/423; H01L21/3213; H01L21/768; H01L29/49; H01L29/739; H01L29/78
Attorney, Agent or Firm:
Kaiyu International Patent Office
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