Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2016171275
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device which achieves a gentle current waveform at the time of reverse recovery operation of a high-speed diode, and has a structure having a shallower P-type layer excellent in uniformity of an impurity concentration.SOLUTION: In a semiconductor device, amorphous silicon added with a P-type impurity is deposited on an N-type silicon substrate 3 by a vacuum deposition method, a plasma CVD method and the like, and a P-type layer 2 of an anode layer shallower than by a thermal diffusion method by crystallizing the amorphous silicon by annealing thereby to uniformize a concentration in the P-type layer 2.SELECTED DRAWING: Figure 1
Inventors:
CHEN YI
MORIKAWA NAOKI
MORIKAWA NAOKI
Application Number:
JP2015051699A
Publication Date:
September 23, 2016
Filing Date:
March 16, 2015
Export Citation:
Assignee:
SANKEN ELECTRIC CO LTD
International Classes:
H01L21/329; H01L21/20; H01L29/861; H01L29/868
Domestic Patent References:
| JP2012146716A | 2012-08-02 | |||
| JP2009076642A | 2009-04-09 |