Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2017034265
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To improve reliability of a semiconductor device.SOLUTION: A semiconductor device comprises: coils CL1 formed on a semiconductor substrate SB via a first insulation film; a second insulation film formed so as to cover the first insulation film and the coils CL1; a pad PD1 formed on the second insulation film; a laminated film LF which is formed on the second insulation film and has an opening OP1 for exposing a part of the pad PD1; and coils CL2 formed on the laminated insulation film. The coils CL2 are arranged above the coils CL1 and the coils CL2 and the coils CL1 are magnetically coupled with each other. The laminated film LF is composed of a silicon oxide film LF1, a silicon nitride film LF2 on the silicon oxide film F1 and a resin film LF3 on the silicon nitride film LF2.SELECTED DRAWING: Figure 3
Inventors:
FUNAYA TAKUO
IGARASHI TAKAYUKI
IGARASHI TAKAYUKI
Application Number:
JP2016180151A
Publication Date:
February 09, 2017
Filing Date:
September 15, 2016
Export Citation:
Assignee:
RENESAS ELECTRONICS CORP
International Classes:
H01L21/822; H01F17/00; H01F27/00; H01F27/29; H01L27/04
Domestic Patent References:
| JP2008502215A | 2008-01-24 | |||
| JP2011054672A | 2011-03-17 | |||
| JP2009302268A | 2009-12-24 | |||
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Foreign References:
| US20110128084A1 | 2011-06-02 | |||
| WO2010137090A1 | 2010-12-02 | |||
| US20060263727A1 | 2006-11-23 |
Attorney, Agent or Firm:
Tsutsui International Patent Office