Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2017055134
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To achieve high reliability by giving stabilized electrical characteristics to a semiconductor device using an oxide semiconductor.SOLUTION: A semiconductor device has an insulating film, a first metal oxide film on the insulating film in contact therewith, an oxide semiconductor film partially in contact with the first metal oxide film, a source electrode and a drain electrode for connection electrically with the oxide semiconductor film, a second metal oxide film partially in contact with the oxide semiconductor film, a gate insulator film on the second metal oxide film in contact therewith, and a gate electrode on the gate insulator film.SELECTED DRAWING: Figure 1
More Like This:
Inventors:
YAMAZAKI SHUNPEI
Application Number:
JP2016226758A
Publication Date:
March 16, 2017
Filing Date:
November 22, 2016
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L29/786; G02F1/1368; H01L21/336; H01L51/50; H05B33/14
Domestic Patent References:
| JP2010062549A | 2010-03-18 | |||
| JP2010028021A | 2010-02-04 | |||
| JP2010016347A | 2010-01-21 | |||
| JP2009231613A | 2009-10-08 | |||
| JP2010021520A | 2010-01-28 | |||
| JP2010272663A | 2010-12-02 |
Foreign References:
| US20100044711A1 | 2010-02-25 |