SEMICONDUCTOR DEVICE - SEMICONDUCTOR ENERGY LAB CO LTD

Title:

SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JP2017157850

Kind Code:

A

Abstract:

PROBLEM TO BE SOLVED: To provide a semiconductor device which is hardly damaged even when stress is locally applied from the outside, and to provide a method of manufacturing the semiconductor device with high yield, which has high nondestructive reliability against local stress from the outside.SOLUTION: A semiconductor device in which an element layer and a structure including high strength fiber of an organic compound or of an inorganic compound which is impregnated with organic resin are fastened is manufactured by providing the structure including the high strength fiber of the organic compound or of the inorganic compound which is impregnated with the organic resin on the element layer having a semiconductor element formed by using an amorphous semiconductor layer, and by performing thermal pressure bonding.SELECTED DRAWING: Figure 1

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Inventors:

SUGIYAMA EIJI
MICHIMAE YOSHITAKA
OTANI HISASHI
TSURUME TAKUYA

Application Number:

JP2017086063A

Publication Date:

September 07, 2017

Filing Date:

April 25, 2017

Export Citation:

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Assignee:

SEMICONDUCTOR ENERGY LAB CO LTD

International Classes:

H01L21/02; G06K19/077; H01L27/12

Domestic Patent References:

JP2005229098A	2005-08-25
JP2000133683A	2000-05-12
JP2005252243A	2005-09-15
JP2006121060A	2006-05-11

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