Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2020027873
Kind Code:
A
Abstract:
To provide a semiconductor device capable of avoiding a lower layer side being connected with a conductive layer in contact connection.SOLUTION: A semiconductor device comprises a substrate 200, a first conductive layer 10d, a second conductive layer 10f, a first column 14a, a second column 14b, a first contact 16a, a second contact 16b, a channel body 21, and a memory film 20. The first column is connected to an undersurface or side surface of the first conductive layer and extends to the substrate. The second column is connected to an undersurface or side surface of the second conductive layer so as to penetrate the first conductive layer and extends to the substrate. The first contact is electrically connected to the first conductive layer, at a region position radially inside the first column in a first region, with a diameter size smaller than that of the first column and extends to the opposite side with respect to the first conductive layer.SELECTED DRAWING: Figure 1
Inventors:
SHIMIZU KOJIRO
ISHIHARA HANAE
ISHIHARA HANAE
Application Number:
JP2018151824A
Publication Date:
February 20, 2020
Filing Date:
August 10, 2018
Export Citation:
Assignee:
KIOXIA CORP
International Classes:
H01L27/11575; H01L21/336; H01L27/11582; H01L29/788; H01L29/792
Attorney, Agent or Firm:
Tetsuma Ikegami
Akira Sudo
Akira Sudo