Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2022140459
Kind Code:
A
Abstract:
To provide a semiconductor device which allows a large current to be passed therethrough or a semiconductor device which can be stably driven with a high driving voltage.SOLUTION: A semiconductor device comprises: a semiconductor layer; first and second electrodes electrically connected to the semiconductor layer, and spaced apart from each other in a region overlapping with the semiconductor layer; first and second gate electrodes provided on opposing sides of the semiconductor layer; a first gate insulating layer between the semiconductor layer and first gate electrode; and a second gate insulating layer between the semiconductor layer and second gate electrode. The first gate electrode is provided so as to overlap with a part of the first electrode, the semiconductor layer and a part of the second electrode. The second gate electrode is provided so as to overlap with a part of the first electrode and the semiconductor layer, and so as not to overlap with the second electrode.SELECTED DRAWING: Figure 1
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Inventors:
Sanpei Yamazaki
Yoshiyuki Kobayashi
Daisuke Matsubayashi
Akihisa Shimomura
Daigo Ito
Yoshiyuki Kobayashi
Daisuke Matsubayashi
Akihisa Shimomura
Daigo Ito
Application Number:
JP2022110258A
Publication Date:
September 26, 2022
Filing Date:
July 08, 2022
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H01L21/28; H01L21/8239; H01L21/8242; H01L27/11556; H01L29/41; H01L29/417; H01L29/423; H01L51/50; H05B33/02
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