Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2023106446
Kind Code:
A
Abstract:
To provide a semiconductor device with good electric characteristics, and also to provide a semiconductor device with stable electric characteristics.SOLUTION: A semiconductor device comprises a first insulation layer, a second insulation layer, a third insulation layer, a fourth insulation layer, a semiconductor layer, and a first conductive layer. The second insulation layer is located on the first insulation layer. An island-like semiconductor layer is located on the second insulation layer. The second insulation layer has an island-like shape having an end part outside a region overlapping the semiconductor layer. The fourth insulation layer covers the second insulation layer, the semiconductor layer, the third insulation layer, and the first conductive layer, is in contact with a part of an upper surface of the semiconductor layer, and is also in contact with the first insulation layer outside an end part of the second insulation layer. The semiconductor layer contains metal oxide. The second and third insulation layers contain oxide. The first insulation layer contains metal oxide or nitride. The fourth insulation layer contains metal nitride.SELECTED DRAWING: Figure 1
Inventors:
YAMAZAKI SHUNPEI
KAMINAGA MASAMI
IGUCHI TAKAHIRO
SHIMA YUKINORI
OKAZAKI KENICHI
KAMINAGA MASAMI
IGUCHI TAKAHIRO
SHIMA YUKINORI
OKAZAKI KENICHI
Application Number:
JP2023076509A
Publication Date:
August 01, 2023
Filing Date:
May 08, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L21/336; G02F1/1368; G09F9/30; H01L29/786; H10K50/10; H10K50/115; H10K59/10; H10K59/123; H10K59/124