Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2803408
Kind Code:
B2
Abstract:
PURPOSE: To prevent that the influence of an overetched via hole appears even when a via hole is overetched a little in a semiconductor device wherein the via hole is formed just under a metal layer formed on the surface of a semiconductor substrate.
CONSTITUTION: The title semiconductor device is constituted of the following: a semiconductor substrate 1 where a plurality of holes or groove-shaped hollows 5 have been formed on the surface; a metal layer 6 which has been formed integrally on the inside of the hollows and around the hollows on the surface of the semiconductor substrate; a via hole 7 which is formed just under each hollow so as to have a depth which reaches each hollow from the rear of the semiconductor substrate; and a grounding electrode 8 which is formed on the inside of the via hole and on the rear of the semiconductor substrate and which is connected to the metal layer formed at the inside of each hollow.
Inventors:
Kazuhiro Okaba
Application Number:
JP25626891A
Publication Date:
September 24, 1998
Filing Date:
October 03, 1991
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L21/28; H01L21/285; H01L21/302; H01L21/3065; H01L21/338; H01L21/768; H01L23/12; H01L29/41; H01L29/812; (IPC1-7): H01L21/338; H01L21/768; H01L29/41; H01L29/812
Domestic Patent References:
| JP60161651A | ||||
| JP2275644A | ||||
| JP228335A | ||||
| JP399470A | ||||
| JP348430A | ||||
| JP344039A |
Attorney, Agent or Firm:
Kaneo Miyata (2 outside)
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