Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3509896
Kind Code:
B2
Abstract:
PURPOSE: To provide a semiconductor device having junction-type field effect transistors which can not only set pinch-off voltage at a design stage but operate for a wide range.
CONSTITUTION: A second junction-type field effect transistor T2 having breakdown voltage and pinch-off voltage, which are higher than those of the first transistor, is cascaded to the first junction-type field effect transistor T1 having a channel which is formed by dispersion or implanting pinched off to a lateral direction parallel to the surface 2 of a semiconductor main body 1. To increase the breakdown voltage much more, a third junction-type field effect transistor T3 having a conductive channel 20 opposite to the first and second transistors is cascaded to the combination of the first and second transistors.
Inventors:
Schoofs, Franciscus A. C. M.
Application Number:
JP10619193A
Publication Date:
March 22, 2004
Filing Date:
April 08, 1993
Export Citation:
Assignee:
PHILIPS ELECTRON NV
International Classes:
H01L21/337; H01L27/098; H01L29/772; H01L29/808; (IPC1-7): H01L21/337; H01L29/808
Attorney, Agent or Firm:
津軽 進 （外１名）
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