半導体装置 - Nissan Motor Co., Ltd

Title:

半導体装置

Document Type and Number:

Japanese Patent JP5476746

Kind Code:

B2

Abstract:

To provide a power semiconductor device which can suppress a vibration phenomenon of a current/voltage occurring during reverse recovery operation while suppressing loss during conduction of a reflux diode and loss during transition operation.

The semiconductor device includes the reflux diode which performs unipolar operation, and a semiconductor circuit which is structured by connecting a capacitor and resistance in series and is connected to the reflux diode in parallel. The semiconductor circuit 200 includes a semiconductor base 11 functioning as at least a part of the resistance 220, a capacity decline preventing region 1001 arranged so as to be in contact with an upper surface of the semiconductor base, and a capacitor dielectric film 12 arranged on the capacity decline preventing region 1001 and functioning as at least a part of the capacitor 210. The capacity decline preventing region 1001 relieves expansion of a depletion layer in the semiconductor base 11 when a reverse bias voltage is applied on the reflux diode.

Inventors:

Tetsuya Hayashi
Masakatsu Hoshi
Hideaki Tanaka
Shigeharu Yamagami
Tatsuhiro Suzuki

Application Number:

JP2009052576A

Publication Date:

April 23, 2014

Filing Date:

March 05, 2009

Export Citation:

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Assignee:

Nissan Motor Co., Ltd

International Classes:

H01L29/78; H01L21/337; H01L21/338; H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H01L27/088; H01L27/098; H01L29/12; H01L29/47; H01L29/739; H01L29/808; H01L29/812; H01L29/861; H01L29/868; H01L29/872; H02M1/34

Domestic Patent References:

JP7273276A
JP2004511910A
JP10506231A

Attorney, Agent or Firm:

Hidekazu Miyoshi
Iwa Saki Kokuni
Kawamata Sumio
Masakazu Ito
Shunichi Takahashi
Toshio Takamatsu

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