Title:
半導体装置
Document Type and Number:
Japanese Patent JP5727859
Kind Code:
B2
Abstract:
One object is to propose a memory device in which a period in which data is held can be ensured and memory capacity per unit area can be increased. The memory device includes a memory element, a transistor including an oxide semiconductor in an active layer for control of accumulating, holding, and discharging charge in the memory element, and a capacitor connected to the memory element. At least one of a pair of electrodes of the capacitor has a light-blocking property. Further, the memory device includes a light-blocking conductive film or a light-blocking insulating film. The active layer is positioned between the electrode having a light-blocking property and the light-blocking conductive film or the light-blocking insulating film.
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Inventors:
Toshihiko Saito
Application Number:
JP2011110948A
Publication Date:
June 03, 2015
Filing Date:
May 18, 2011
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/8242; H01L21/336; H01L21/8247; H01L27/10; H01L27/108; H01L27/115; H01L29/786; H01L29/788; H01L29/792
Domestic Patent References:
| JP2002368226A | ||||
| JP2001044297A | ||||
| JP2000312005A | ||||
| JP2009043871A | ||||
| JP2009135350A |