Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP5987288
Kind Code:
B2
Abstract:
A semiconductor device including a high resistance layer formed on a substrate, the high resistance layer being formed with a semiconductor material doped with as impurity element that makes the semiconductor material highly resistant; a multilayer intermediate layer formed on the high resistance layer; an electron transit layer formed with a semiconductor material on the multilayer intermediate layer; and an electron supply layer formed with a semiconductor material on the electron transit layer, wherein the multilayer intermediate layer is formed with a multilayer film in which a GaN layer and an AlN layer are alternately laminated.
Inventors:
Tetsuro Ishiguro
Application Number:
JP2011213473A
Publication Date:
September 07, 2016
Filing Date:
September 28, 2011
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01L21/338; H01L21/205; H01L21/336; H01L29/778; H01L29/78; H01L29/786; H01L29/812
Domestic Patent References:
| JP2010232297A | ||||
| JP2007250721A | ||||
| JP2010251738A | ||||
| JP2011100772A | ||||
| JP7235665A | ||||
| JP2008288474A | ||||
| JP2010182872A | ||||
| JP2010123725A | ||||
| JP2009176929A | ||||
| JP7086572A |
Foreign References:
| WO2005015642A1 | ||||
| US20100117118 |
Attorney, Agent or Firm:
Tadahiko Ito
Akinori Yamaguchi
Akinori Yamaguchi