Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6113679
Kind Code:
B2
Abstract:
A semiconductor device including a semiconductor substrate having a first surface and a second surface, the first surface being configured for formation of a semiconductor element; a through hole extending through the semiconductor substrate; and a through electrode disposed in the through hole. The through electrode includes an insulating film disposed along a sidewall of the through hole, a conductive layer comprising a first material disposed along the insulating film, and an electrode layer comprising a second material filled inside the through hole over the conductive layer. The first material is softer than the second material. The second material has a melting point higher than a melting point of the first material. The electrode layer includes a void portion being closed near the second surface of the semiconductor substrate.
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Inventors:
Kei Wakatsuki
Atsuko Sakata
Kengo Uchida
Wako Higashi
Mitsuyoshi Endo
Atsuko Sakata
Kengo Uchida
Wako Higashi
Mitsuyoshi Endo
Application Number:
JP2014052126A
Publication Date:
April 12, 2017
Filing Date:
March 14, 2014
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/3205; H01L21/768; H01L23/522
Domestic Patent References:
| JP2012142414A |
Foreign References:
| WO2013160976A1 |
Attorney, Agent or Firm:
Patent Business Corporation Sato International Patent Office
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