Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6240262
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To reduce parasitic inductance.SOLUTION: A semiconductor device of an embodiment includes a substrate, a first circuit part and a second circuit part. The first circuit part has a first switching element and a second switching element. The second circuit part has a third switching element and a fourth switching element. The first switching element is juxtaposed with either one of the second switching element or the third switching element in a first direction along the substrate and juxtaposed with the fourth switching element along the substrate in a second direction crossing the first direction. The other of either of the second switching element or the third switching element is juxtaposed with the fourth switching element in the first direction and juxtaposed with either one of the second switching element or the third switching element in the second direction.SELECTED DRAWING: Figure 1
Inventors:
Kazuto Takao
Hiroshi Kono
Takuo Kikuchi
Hiroshi Kono
Takuo Kikuchi
Application Number:
JP2016118433A
Publication Date:
November 29, 2017
Filing Date:
June 15, 2016
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L25/07; H01L25/18
Domestic Patent References:
| JP2001286158A | ||||
| JP2010205960A |
Attorney, Agent or Firm:
Masahiko Hinataji
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