Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6271050
Kind Code:
B2
Abstract:
A highly reliable display device which has high aperture ratio and includes a transistor with stable electrical characteristics is manufactured. The display device includes a driver circuit portion and a display portion over the same substrate. The driver circuit portion includes a driver circuit transistor and a driver circuit wiring. A source electrode and a drain electrode of the driver circuit transistor are formed using a metal. A channel layer of the driver circuit transistor is formed using an oxide semiconductor. The driver circuit wiring is formed using a metal. The display portion includes a pixel transistor and a display portion wiring. A source electrode and a drain electrode of the pixel transistor are formed using a transparent oxide conductor. A semiconductor layer of the pixel transistor is formed using the oxide semiconductor. The display portion wiring is formed using a transparent oxide conductor.
More Like This:
Inventors:
Shunpei Yamazaki
Junichiro Sakata
Hiroyuki Miyake
Hideaki Kuwahara
Junichiro Sakata
Hiroyuki Miyake
Hideaki Kuwahara
Application Number:
JP2017011140A
Publication Date:
January 31, 2018
Filing Date:
January 25, 2017
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; G02F1/1343; G02F1/1368; G02F1/167; G09F9/30; H01L21/28; H01L21/8234; H01L27/088
Domestic Patent References:
| JP2007123861A | ||||
| JP2007165861A | ||||
| JP2008172244A | ||||
| JP2006178031A |