Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6296166
Kind Code:
B2
Abstract:
To improve a tradeoff between ON voltage and ON/OFF loss while maintaining short-circuit tolerance, provided is a semiconductor device including an IGBT element; a super junction transistor element connected in parallel with the IGBT element; and a limiting section that limits a voltage applied to a gate terminal of the IGBT element more than a voltage applied to a gate terminal of the super junction transistor element.
Inventors:
Tatsuya Naito
Masato Otsuki
Masato Otsuki
Application Number:
JP2016555144A
Publication Date:
March 20, 2018
Filing Date:
September 28, 2015
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L29/78; H01L21/8234; H01L27/06; H01L27/088; H01L29/06; H01L29/739; H02M1/00
Domestic Patent References:
| JP2006344779A | ||||
| JP2014130909A | ||||
| JP2013125806A | ||||
| JP2012253202A | ||||
| JP4354156A | ||||
| JP2002016253A |
Attorney, Agent or Firm:
Longhua International Patent Service Corporation