Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6298186
Kind Code:
B2
Abstract:
To provide a semiconductor device including an inverter circuit whose driving frequency is increased by control of the threshold voltage of a transistor or a semiconductor device including an inveter circuit with low power consumption. An inverter circuit includes a first transistor and a second transistor each including a semiconductor film in which a channel is formed, a pair of gate electrodes between which the semiconductor film is placed, and source and drain electrodes in contact with the semiconductor film. Controlling potentials applied to the pair of gate electrodes makes the first transistor have normally-on characteristics and the second transistor have normally-off characteristics. Thus, the driving frequency of the inverter circuit is increased.
Inventors:
Takuro Omaru
Shuhei Nagatsuka
Shuhei Nagatsuka
Application Number:
JP2017023878A
Publication Date:
March 20, 2018
Filing Date:
February 13, 2017
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H03K19/0944; H01L29/786; H03K3/354; H03K19/094
Domestic Patent References:
| JP2011142316A | ||||
| JP2011120221A | ||||
| JP2010251735A | ||||
| JP2010087518A | ||||
| JP2007318061A | ||||
| JP1019775A | ||||
| JP2011086929A |
Foreign References:
| US20070257252 |
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