Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6360229
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To improve performance of a semiconductor device.SOLUTION: A semiconductor device has: an electrode 16 and a dummy electrode DE which are formed away from each other on a semiconductor substrate; an electrode 23 formed between the electrode 16 and the dummy electrode DE and on a peripheral side surface of the electrode 16 and on a peripheral side surface of the dummy electrode DE; and a capacitive insulation film 27 formed between the electrode 16 and the electrode 23. The electrode 16, electrode 23 and capacitive insulation film 27 form a capacitive element. The semiconductor device further has: a plug PG1 which pierces an interlayer insulation film 34 and is electrically connected with the electrode 16; and a plug PG2 which pierces the interlayer insulation film 34 to be electrically connected with a part formed on a side face of the dummy electrode DE out of the electrode 23 on the side opposite to the electrode 16 side.SELECTED DRAWING: Figure 3
More Like This:
Inventors:
Yasuyuki Ishii
Hiroshi Chakihara
Hiroshi Chakihara
Application Number:
JP2017083407A
Publication Date:
July 18, 2018
Filing Date:
April 20, 2017
Export Citation:
Assignee:
Renesas Electronics Corporation
International Classes:
H01L21/822; H01L21/336; H01L27/04; H01L27/10; H01L27/11531; H01L27/1157; H01L27/11573; H01L29/788; H01L29/792
Domestic Patent References:
| JP2013503487A | ||||
| JP2009009984A | ||||
| JP2002190574A | ||||
| JP2008226998A | ||||
| JP2010199161A | ||||
| JP2003258107A | ||||
| JP2009099640A |
Foreign References:
| US20070155090 | ||||
| US20070291439 | ||||
| US20090288869 | ||||
| WO2010082389A1 |
Attorney, Agent or Firm:
Tsutsui International Patent Office