Title:
半導体装置
Document Type and Number:
Japanese Patent JP6516978
Kind Code:
B2
Abstract:
One of a source and a drain of a first oxide semiconductor (OS) transistor is connected to a gate of a second OS transistor and one electrode of a first capacitor. One of a source and a drain of the second OS transistor is connected to one electrode of a second capacitor and one of a source and a drain of a Si transistor. The gate of the second OS transistor serves as a charge retention node. Charge injection and retention at this node is controlled by the first OS transistor. The other of the source and the drain of the second OS transistor is connected to a wiring applying a high potential, and a potential of the second capacitor that corresponds to the write data is maintained. A signal corresponding to the write data is read by the Si transistor.
Inventors:
Yoshimoto Kurokawa
Application Number:
JP2014140122A
Publication Date:
May 22, 2019
Filing Date:
July 08, 2014
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G11C11/405; H01L21/8242; H01L27/108; H01L29/786
Domestic Patent References:
| JP5210971A | ||||
| JP2012256818A | ||||
| JP201528829A |