Title:
半導体装置
Document Type and Number:
Japanese Patent JP6612039
Kind Code:
B2
Abstract:
The semiconductor device includes a first transistor, a second transistor, a first power supply wiring, and a second power supply wiring. The first transistor and the second transistor are stacked. The first power supply wiring and the second power supply wiring are stacked. The second power supply wiring and the first power supply wiring at least partly overlap with each other. The second power supply wiring and the first power supply wiring are substantially parallel to each other. A source electrode of the first transistor is electrically connected to the first power supply wiring. A source electrode of the second transistor is electrically connected to the second power supply wiring. The second transistor is an n-channel transistor, and a channel formation region is formed using an oxide semiconductor. The first transistor is a p-channel transistor, and a channel formation region is formed using silicon.
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Inventors:
Kiyoshi Kato
Application Number:
JP2015037800A
Publication Date:
November 27, 2019
Filing Date:
February 27, 2015
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/8238; H01L21/28; H01L21/3205; H01L21/336; H01L21/768; H01L21/82; H01L21/822; H01L21/8234; H01L21/8239; H01L21/8242; H01L21/8244; H01L23/522; H01L27/04; H01L27/06; H01L27/088; H01L27/092; H01L27/105; H01L27/108; H01L27/11; H01L29/417; H01L29/423; H01L29/49; H01L29/786; H01L29/788; H01L29/792
Domestic Patent References:
| JP5291259A | ||||
| JP3177053A | ||||
| JP2013243352A | ||||
| JP1246863A | ||||
| JP2003124320A |
Foreign References:
| WO2012176422A1 |