Title:
半導体装置
Document Type and Number:
Japanese Patent JP6727794
Kind Code:
B2
Abstract:
To provide a semiconductor device including a transistor which includes an oxide semiconductor film and has excellent electrical characteristics. A semiconductor device includes a transistor including a first electrode, a first insulating film over the first electrode, an oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, and a second electrode over the second insulating film. The oxide semiconductor film includes a first oxide semiconductor film and a second oxide semiconductor film. The difference between energy at a conduction band minimum of the first oxide semiconductor film and energy at a conduction band minimum of the second oxide semiconductor film is greater than or equal to 0.2 eV. A rate of change in drain current per unit channel width relative to a drain voltage of 1 V can be less than or equal to 2%.
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Inventors:
Shunpei Yamazaki
Kenichi Okazaki
Kanamura Taishi
Daisuke Kurosaki
Gyoutoku Shima
Junichi Koizuka
Hiroyuki Miyake
Kenichi Okazaki
Kanamura Taishi
Daisuke Kurosaki
Gyoutoku Shima
Junichi Koizuka
Hiroyuki Miyake
Application Number:
JP2015230200A
Publication Date:
July 22, 2020
Filing Date:
November 26, 2015
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; G02F1/1368; G09F9/00; G09F9/30; H01L21/336; H01L21/8234; H01L21/8242; H01L27/088; H01L27/10; H01L27/108; H01L27/146; H01L51/50
Domestic Patent References:
| JP2011181913A | ||||
| JP2014143408A | ||||
| JP2014142623A | ||||
| JP2014116597A |