Title:
半導体装置
Document Type and Number:
Japanese Patent JP7050643
Kind Code:
B2
Abstract:
An object is to provide a technique capable of increasing a heat radiation property in radiating a heat generated in a shunt resistance. A semiconductor device includes: a container body having a space with an opening; a semiconductor chip, a shunt resistance, and a circuit pattern disposed in the space in the container body; a partition member; a first cover; and a second cover. The partition member separates the space in the container body into a first space and a second space. The first cover covers a part of the opening corresponding to the first space, and the second cover covers a part of the opening corresponding to the second space. At least one hole through which the second space and outside of the container body are communicated with each other is formed in the second cover or by the second cover.
Inventors:
Otori Taiji
Application Number:
JP2018191657A
Publication Date:
April 08, 2022
Filing Date:
October 10, 2018
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L23/02; H01L23/28; H01L25/00
Domestic Patent References:
| JP4162489A | ||||
| JP51039133U | ||||
| JP2003112980A | ||||
| JP2007281219A | ||||
| JP9064549A | ||||
| JP61070971U | ||||
| JP52115844U | ||||
| JP2003243609A |
Foreign References:
| US20080204996 |
Attorney, Agent or Firm:
Hidetoshi Yoshitake
Takahiro Arita
Takahiro Arita