Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH01179412
Kind Code:
A
Abstract:
PURPOSE:To accomplish a highly reliable FET having low degree of deterioration in FET characteristics in high temperature by a method wherein the NA-ND ratio of the difference of a shallow acceptor and a shallow donor is set at a specific value or above against the density NT of the deep donor in a substrate. CONSTITUTION:A semiconductor device is formed using a semiinsulative GaAs substrate 11. At that time, the ratio (NA-ND)/NT of difference in density of a shallow acceptor and a shallow donor of 2.6X10<-2> or above is used against the density NT of the deep donor contained in the substrate 11. As a result, the K value at 500K increases about 10%, and the yield of the circuit normally operated at 500K is improved by 15%. As a result, the manufacture of a highly reliable FET having low degree of deterioration in FET characteristics at high temperature can be accomplished.
Inventors:
HIROSE MAYUMI
Application Number:
JP133288A
Publication Date:
July 17, 1989
Filing Date:
January 08, 1988
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L21/208; C30B29/42; H01L21/338; H01L29/80; H01L29/812; (IPC1-7): C30B29/42; H01L21/208; H01L29/80
Attorney, Agent or Firm:
Noriyuki Noriyuki (1 person outside)
Previous Patent: III-V COMPOUND SEMICONDUCTOR VAPOR GROWTH METHOD
Next Patent: DIFFUSION FURNACE WAFER HANDLING DEVICE
Next Patent: DIFFUSION FURNACE WAFER HANDLING DEVICE