PURPOSE: To prevent stress from being accumulated at a contact part and prevent deterioration of a characteristic value by partially covering a part above the contact part between an impurity diffusion region and an Al wire with an insulation film which is made of a softer material than a cover film.

CONSTITUTION: A p-type base region 2 consisting of a diffusion layer 3 and an n-type emitter region 3 are formed on a silicon substrate 1 and this n-type emitter region 3 is connected electrically and physically to an Al wire 5 which is formed on an insulation film through a contact hole. Then, a part above this emitter/contact part 4 is in a cover structure where it is partially covered with a material, for example a silicon oxide film 6, which is softer than a material of a cover film 7 which covers an entire chip surface, thus enabling stress which is accumulated at the contact part to be relaxed and deterioration of characteristics to be restricted.