Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH04229658
Kind Code:
A
Abstract:
PURPOSE: To stop effects of an electric field, produced by a high-voltage connection bus, on charge carriers in a drift region positioned below the high-voltage connection bus. CONSTITUTION: On a 1st dielectric layer 22, covering a charge carrier drift region 21 between a gate 18 and a drain 20, conductive thin streaks are arranged in order to form crossing paths and extended almost at right angles to those crossing paths. Those conductive thin streaks are covered with a 2nd dielectric layer, and the high-voltage connection bus 36 which is wider than the width of those conductive thin streaks and much narrower than the length of the conductive thin streaks is supported on the 2nd dielectric layer and extended beyond the crossing paths. The length of each conductive thin streak is much longer than the width of the high-voltage connection bus, so that the coupling capacitance between each conductive thin streak and high-voltage connection bus becomes much smaller than the coupling capacitance between each conductive thin streak and the peat of the drift area below it. The majority of the electric field of the high-voltage connection bus is applied to the former coupling capacitance for effectively shielding the drift region from the electric field.
Inventors:
DAGURASU MATSUKAASAA
ROBAATO MIYUREN
ROBAATO MIYUREN
Application Number:
JP14069291A
Publication Date:
August 19, 1992
Filing Date:
May 17, 1991
Export Citation:
Assignee:
PHILIPS NV
International Classes:
H01L21/768; H01L23/522; H01L29/06; H01L29/40; H01L29/78; H01L29/10; (IPC1-7): H01L21/90; H01L29/784
Attorney, Agent or Firm:
Akihide Sugimura (5 outside)