Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH05113581
Kind Code:
A
Abstract:
PURPOSE:To eliminate parasitic channels to as to decrease leak currents and to enable increasing on/off of transistors by using a p type electric field effect type gate insulated transistor (FEIGTR) as a switching transistor for feeding electricity to picture element electrodes. CONSTITUTION:This semiconductor device for a light valve substrate is constituted by forming a picture element array part consisting of a switch element group for selectively feeding electricity to at least a picture element electrode group on a semiconductor silicon single crystal film existing on an electrical insulating material. The switch element group consists of the p type FEIGTR having a well 11 consisting of an N type impurity, a gate oxide film 12, a gate electrode 13 consisting of a polycrystalline silicon film, and a source 14 and drain 15 respectively consisting of high-concn. p type impurity layers. An intermediate insulating film 111 separates a signal line 110 and a polycrystalline silicon film 18 for picture element driving electrodes. The higher on/off can be taken if the transistor of a p type LDD structure is adopted.
Inventors:
TAKAHASHI KUNIHIRO
KOJIMA YOSHIKAZU
TAKASU HIROAKI
KOJIMA YOSHIKAZU
TAKASU HIROAKI
Application Number:
JP27582691A
Publication Date:
May 07, 1993
Filing Date:
October 23, 1991
Export Citation:
Assignee:
SEIKO INSTR INC
International Classes:
G02F1/136; G02F1/1368; H01L21/336; H01L27/12; H01L29/78; H01L29/786; (IPC1-7): G02F1/136; H01L27/12; H01L29/784
Attorney, Agent or Firm:
Keinosuke Hayashi