PURPOSE: To prevent any excessive brazing material from locally creeping up in relation to the title semiconductor device especially when a cap is to be brazed into the lead base of LCC.

CONSTITUTION: The title semiconductor device is composed of a protrusion type brazed part 11 on the periphery so as to mount a chip 3 whereon a semiconductor element is formed, a ceramic-made lead base 1; a metallic cap 2 brazed into the upper wall surface 11a of the brazed part 11 of the lead base 1 using a brazing material 4 to be sealed; while the upper wall surface 11a and inside wall surface 11b of the brazed part 11 in the lead base 1 are coated with a metallized layer 5.