Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH07183309
Kind Code:
A
Abstract:
PURPOSE: To remove distortion from the collector-emitter characteristic curve of a conventional lateral high voltage PNP transistor by bringing a polysilicon shield into electrical contact with an emitter metal electrode. CONSTITUTION: Electrostatic shielding performance of a polysilicon shield 316 is enhanced by covering a base drift region 203 entirely with the polysilicon shield 316 but the inner end 320 of the polysilicon shield 316 preferably extends above an emitter region 310 to cover a P-N junction 400. The outer end 318 thereof extends over a P-N junction 401 while covering a part of a collector region 303 and connected electrically with an emitter electrode 308 at a passing contact 322 so that it is enhanced furthermore. According to the structure, distortion is removed from the collector-emitter characteristic curve of a conventional lateral high voltage PNP transistor resulting in a lateral high voltage PNP transistor in which distortion in the output characteristics is improved.
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Inventors:
MUHAMETSUDO AIMAN SHIBIBU
Application Number:
JP30159594A
Publication Date:
July 21, 1995
Filing Date:
November 11, 1994
Export Citation:
Assignee:
AMERICAN TELEPHONE & TELEGRAPH
International Classes:
H01L29/73; H01L21/331; H01L29/06; H01L29/40; H01L29/732; H01L29/735; (IPC1-7): H01L21/331; H01L29/73
Attorney, Agent or Firm:
Hirofumi Mimata