Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH09162315
Kind Code:
A
Abstract:
To provide a semiconductor device allowing manufacture with a small process and having excellent element characteristics.
An n- type silicon active layer 3 with a thickness of not exceeding 6μm is arranged on a silicon substrate 1 through a silicon oxide film 2. An npn type bipolar transistor BT 1 with low pressure resistance is arranged on an active layer 3. A thickness of a well layer 4 under a p-well layer 6 of BT 1 is set up above a thickness of 1μm. Thereby, an increase in a leakage current and a drop in an amplification factor Hfe can be suppressed.
Inventors:
NAKAGAWA AKIO
YAMAGUCHI YOSHIHIRO
MATSUSHIRO TOMOKO
ANDO MASAYUKI
YAMAGUCHI YOSHIHIRO
MATSUSHIRO TOMOKO
ANDO MASAYUKI
Application Number:
JP31988895A
Publication Date:
June 20, 1997
Filing Date:
December 08, 1995
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L29/73; H01L21/331; H01L21/762; H01L21/8249; H01L27/04; H01L27/06; H01L29/732; H01L29/739; H01L29/78; H01L29/786; (IPC1-7): H01L21/8249; H01L21/331; H01L21/762; H01L27/06; H01L29/73; H01L29/78; H01L29/786
Attorney, Agent or Firm:
Togawa Hideaki
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