Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS52120781
Kind Code:
A
Abstract:
PURPOSE:The surface of the semiconductor device is covered with lamination coat which uses Al2O3 film for the lower layer and SiO2 film for the upper layer respectively. And Al2O3 thick film of the region reaching between the substrate circumference sections from the area near vamp terminal is made thickner than Al2O3 film at internal circuit wiring region. Furthermore, the upper part of vamp terminal is made to expose Al2O3 film. In this way, the life of the semiconductor device can be extended.
Inventors:
NAKAMURA MASARU
Application Number:
JP3806976A
Publication Date:
October 11, 1977
Filing Date:
April 05, 1976
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L23/52; H01L21/283; H01L21/3205; H01L21/60; (IPC1-7): H01L21/88