Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5214382
Kind Code:
A
Abstract:
PURPOSE: To make the density of integration in the device large and to avoide the leakage at the edge of PN junction by covering a part of a region of source and drain with a layer of polycrystalline silicon.
Inventors:
SHIMADA SHIYUNJI
Application Number:
JP9028575A
Publication Date:
February 03, 1977
Filing Date:
July 25, 1975
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L29/78; G01R33/02; H01L21/28; H01L21/31; H01L21/316; H01L21/336; H01L29/40; H01L29/43; (IPC1-7): H01L21/28; H01L21/31; H01L29/40; H01L29/78