PURPOSE: To control the load directly by utilizing a phenomenon that backward leak current of a pn junction increases as the stress applied to the pn junction increases.
CONSTITUTION: A groove 12 is formed in the reverse side of a semiconductor crystal substrate 11, while the thickness of the remaining area, or a flexiable area 13, is quite thinner than the other area. The device itself is soldered on a mounting table 20. The semiconductor crystal substrate 11 consists of p type conductive layers p1 and p2, and n type conductive layers n1 and n2. An element whose construction is p1n1p2n2 is similar to a switching element generally known as a thyristor. Under a forward bias, switching from a high impedance low current condition to a low impedance high current area or vice versa can be done.
MIHASHI YUTAKA
NAKADA JIYOUSUKE
