Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5562764
Kind Code:
A
Abstract:
PURPOSE: To prevent a semiconductor from damaging by providing a metallic oxide film on the metallic film surface for shielding light or electromagnetic induction.
CONSTITUTION: An aluminum film 8 is formed on an internal wiring protecting insulator film 7, and anodized to form an Al2O3 11 in a depth of approx. 0.2μm from the surface of aluminum. The Al2O3 has high humidity resistance and prevents the film 8 from corroding with water passed through a package. Accordingly, no leakage occurs between the film 8 and the internal wiring metallic film 6 to damage no semiconductor device.
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Inventors:
KAIDA NAOHIKO
Application Number:
JP13539878A
Publication Date:
May 12, 1980
Filing Date:
November 01, 1978
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L23/52; H01L21/3205; H01L27/14; H01L27/146; (IPC1-7): H01L21/88; H01L27/14