Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5732641
Kind Code:
A
Abstract:
PURPOSE:To eliminate malfunctioning by preventing the incidence of light to the surface of an IC with a boron-doped amorphous silicon thin film provided in an interlayer insulation film between a polycrystalline silicon wiring and an Al wiring as nonelectric wiring. CONSTITUTION:A polycrystalline Si 28 is formed selectively on an insulator film 27 on a substrate 26 and an impurity diffused layer 29 is provided through a hole. A first insulation layer 30, a boron doped amorphous silicon film 31 and a second insulation film 32 are entirely formed in sequence. Contact holes 33 and 34 are provided at a desired position corresponding to the polycrystalline Si 28 and the diffused layer 29 and metal wiring Al 35 and 36 is applied therein. Finally, a patterning is performed to complete an IC. This enables the reflection and absorption of light entering the surface of the IC thereby preventing increase in the power consumption of the IC due to light and malfunctioning of the circuit.
Inventors:
YAMADA AYAO
Application Number:
JP10788280A
Publication Date:
February 22, 1982
Filing Date:
August 06, 1980
Export Citation:
Assignee:
SUWA SEIKOSHA KK
International Classes:
H01L23/52; H01L21/31; H01L21/3205; (IPC1-7): H01L21/88