Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS59188149
Kind Code:
A
Abstract:
PURPOSE:To enhance the electrostatic breakdown resistance of each terminal of a contact by forming to detour a wiring layer, and increasing the length of aluminum wirings for connecting a bonding pad and an element such as a diffused resistor, thereby preventing an abnormal contact alloy from producing. CONSTITUTION:A wiring layer 5 between a bonding pad 1 and a contacting hole 4a is formed of the first wiring layer along the side of the pad 1 and the second wiring layer remote from the pad 1, and the first wiring layer is increased in length as compared with the second wiring layer. Thus, even if the distance (l) between the pad 1 and the hole 4a is short, the layer 5 is detoured in shape. Accordingly, the substantial distance can be sufficiently increased, thereby effectively preventing the material of the pad from impregnating into the semiconductor region.
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Inventors:
SATOU NAONOBU
Application Number:
JP6330484A
Publication Date:
October 25, 1984
Filing Date:
April 02, 1984
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/60; (IPC1-7): H01L21/60
Attorney, Agent or Firm:
Katsuo Ogawa