Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS59197177
Kind Code:
A
Abstract:
PURPOSE:To contrive to make no interface level generate even when layers having a different energy gap respectively have been made to adjoin to each other when a PIN-IPIN or PN-PN junction is constituted by laminating 0.01- 10mum thick non-single crystal layers added hydrogen or a halogen element by a method wherein an additional matter, which is modifiable the energy band, has been added in a semiconductor material on one side, which constitutes the I-N or P-N junction. CONSTITUTION:When an NP-NP structural photo cell or solar cell is formed, the relation among energy gaps Eg is set at Eg(21)>Eg(22)>Eg(23) and (24). These are all subject to be a non-single crystal semiconductor and the thickness of the non-single crystal substances Eg(22) and (23) among these is both set in 0.01- 10mum. In a cell made into a PI1-I2N constitution, the energy gas (25) has been devised so as to enable to pass through wavelengths of 0.4mum or more and the Eg(28) has been made into Si of 1.1eV. Moreover, the Eg(26) and the Eg(27) are subject to be intrinsic to light, and 1-5% and 3-10% of nitrogen or carbon are made to contain in the Eg(26) and the Eg(27) respectively.
Inventors:
YAMAZAKI SHIYUNPEI
Application Number:
JP5168684A
Publication Date:
November 08, 1984
Filing Date:
March 16, 1984
Export Citation:
Assignee:
YAMAZAKI SHUNPEI
International Classes:
H01L31/04; G03G5/08; H01L31/06; H01L31/065; H01L31/0687; H01L31/075; H01L31/076; H01L31/18; (IPC1-7): H01L31/04
Domestic Patent References:
| JPS5342693A | 1978-04-18 | |||
| JPS51132793A | 1976-11-18 | |||
| JPS5084189A | 1975-07-07 | |||
| JPS5146888A | 1976-04-21 | |||
| JPS51890A | 1976-01-07 |
Attorney, Agent or Firm:
Asao Kamoda (1 person outside)
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