Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5958824
Kind Code:
A
Abstract:
PURPOSE:To form a conductor wiring in uniform thickness by making the area of an upper layer larger than that of a lower layer in the area of the opening of the through-hole of an insulating film. CONSTITUTION:An SiO2 film 32 is bored on a P layer 31, the opening is clogged by an Si3N4 film 32', an Si3N4 film 33 is superposed through a CVD method, a resist mask 40 is formed, and the film 33 is bored 38 through plasma etching. The resist mask 40 is formed, and the film 32' is bored by buffer fluoric acid by using an opening 39 smaller than the opening 38. Al is evaporated, and the wiring 34 connected to the P layer 31 is formed. Consequently, two layer inter- layer insulating films are each bored independently, and the opening of the upper layer is made wider than that of the lower layer. Accordingly, an eave is not formed in the upper layer insulating film by the difference of etching rates in the lateral direction, the wiring can be formed in uniform thickness, disconnection is prevented, and the device of high reliability is obtained.
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Inventors:
SATOU NOBORU
Application Number:
JP16901282A
Publication Date:
April 04, 1984
Filing Date:
September 28, 1982
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/3213; H01L21/28; H01L21/306; H01L21/31; H01L29/41; (IPC1-7): H01L21/306; H01L21/314; H01L21/88
Domestic Patent References:
| JPS4915103A | 1974-02-09 | |||
| JPS4918577A | 1974-02-19 | |||
| JPS55163861A | 1980-12-20 | |||
| JPS5648150A | 1981-05-01 |
Attorney, Agent or Firm:
Uchihara Shin