Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5972182
Kind Code:
A
Abstract:
PURPOSE:To improve intrinsic conversion efficiency by a method wherein the effective molecular diameter of a reactive gas is rendered not smaller than specified and P leading to the generation of recombination cores is rendered very low in concentration. CONSTITUTION:A reaction furnace 1 is provided with an external heating furnace 21, a substrate 22, a pair of electrodes 3, 3', a high frequency oscillator 2 and, for the purpose of activating and decomposing a reactive gas, with a microwave oscillator 17 and an attenuator 18. For the formation of an Si film, silane is supplied through a supply pipe 4 as a reactive gas. Diborane diluted with H, a P type impurity, is supplied through a supply pipe 5, and phospine is supplied through a supply pipe 6. Specified quantities of these gases are put into the active furnace 1 with the intermediary of gas refining means 11, 14; 12, 15; 13, 16. A molecular sieve or the like of a specified effective molecular diameter is employed to keep the effective diameter of molecules of silane etc. not smaller than specified and the concentration low of P in phospine.
Inventors:
YAMAZAKI SHIYUNPEI
Application Number:
JP18254682A
Publication Date:
April 24, 1984
Filing Date:
October 18, 1982
Export Citation:
Assignee:
HANDOTAI ENERGY KENKYUSHO
International Classes:
H01L31/04; H01L31/0376; H01L31/06; H01L31/075; H01L31/18; (IPC1-7): H01L31/04
Domestic Patent References:
| JPS564287A | 1981-01-17 | |||
| JPS5643083A | 1981-04-21 |
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