Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5994845
Kind Code:
A
Abstract:
PURPOSE:To perform insulating separation perfectly by a method wherein an ion is prevented from being produced on the interface between an oxide film between elements and a PSG formed on the oxide film. CONSTITUTION:A wiring pattern of multiple crystal silicon 11 is provided between an oxide film 3 produced by selective oxidation (LOCOS) and a PSG film 7 to be ground. The multiple crystal silicon 11 is formed by means of the same process as that of a silicon gate 6. The ion existing in the interface between the PSG film 7 and the LOCOS oxide film 3 may be prevented from being produced by the wiring pattern 11 also from communicating with the ion in a separating region 2. Even if a bridge 10 is produced in the LOCOS oxide film 3, the bridge 10 may ground a gate at a parasitic MOSFET comprising the separating region 2 and the regions 4 made of the elements at both sides of the region 2 to sustain the insulating separation of the both side MOSFETs 9.
Inventors:
HIRASHIMA KUNIHIKO
Application Number:
JP20565982A
Publication Date:
May 31, 1984
Filing Date:
November 24, 1982
Export Citation:
Assignee:
PIONEER ELECTRONIC CORP
International Classes:
H01L21/76; H01L21/762; H01L21/768; H01L23/522; (IPC1-7): H01L21/88; H01L29/78
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