Title:
半導体装置、及び電子機器
Document Type and Number:
Japanese Patent JP6969881
Kind Code:
B2
Abstract:
To provide a semiconductor device with high design flexibility. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without significantly increasing the number of manufacturing steps. A semiconductor layer where a channel of the first transistor is formed and a semiconductor layer where a channel of the second transistor is formed are formed using semiconductor materials having different electron affinities. When an oxide semiconductor is used for the semiconductor layer, an insulating layer containing excess oxygen is used as an insulating layer below the semiconductor layer. By increasing the thickness of the insulating layer, a large amount of oxygen can be supplied to the semiconductor layer.
Inventors:
Yoshinori Ando
Application Number:
JP2017056832A
Publication Date:
November 24, 2021
Filing Date:
March 23, 2017
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; G02F1/1368; H01L21/336; H01L21/8242; H01L27/108; H01L27/146; H01L51/50; H05B33/14
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