Title:
半導体装置及び半導体装置の製造方法
Document Type and Number:
Japanese Patent JP6870476
Kind Code:
B2
Abstract:
To easily make resistance of a plurality of electrode pairs different.SOLUTION: A semiconductor device comprises: a semiconductor chip 10 with a plurality of electrodes 22; a semiconductor chip 30 with a plurality of electrodes 42 forming a plurality of electrode pairs 70 together with the plurality of electrodes 22; and an intermediate film 50 containing metal nanoparticles 52 and being interposed between a surface provided with the plurality of electrodes 22 of the semiconductor chip 10 and a surface provided with the plurality of electrodes 42 of the semiconductor chip 30. An electrode pair 70a of the plurality of electrode pairs 70 is connected using a dendrite structure 56a formed by metal atoms 54 constituting the metal nanoparticles 52, and electrode pairs 70b, 70c are not connected using the dendrite structure 56 or are connected using a dendrite structure 56b different in thickness from the dendrite structure 56a connecting the electrode pair 70a.SELECTED DRAWING: Figure 1
Inventors:
Hideki Kitada
Yuki Uemura
Yuki Uemura
Application Number:
JP2017104813A
Publication Date:
May 12, 2021
Filing Date:
May 26, 2017
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01L23/12; H01L21/60; H01L21/8239; H01L25/065; H01L25/07; H01L25/18; H01L27/105; H01L45/00; H01L49/00
Domestic Patent References:
| JP2012256657A | ||||
| JP2008244090A | ||||
| JP2018166194A | ||||
| JP2017516293A |
Foreign References:
| WO2015138119A1 | ||||
| US20040193558 | ||||
| CN104916776A |
Attorney, Agent or Firm:
Shuhei Katayama