Title:
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
Document Type and Number:
Japanese Patent JP2021185593
Kind Code:
A
Abstract:
To provide a highly-reliable semiconductor device capable of suppressing corrosion of a metal layer connected to a guard ring.SOLUTION: A semiconductor device comprises: a guard ring 215 formed on a principal surface of a semiconductor substrate 209 so as to surround an active region 103 formed on the principal surface; an inter-layer insulation film 202 formed on the semiconductor substrate so as to cover the guard ring; a field plate 217 arranged on the inter-layer insulation film and electrically connected to the guard ring via a contact 203 penetrating the inter-layer insulation film; and a protection film 221 covering the field plate. The field plate is composed of a lamination structure of a first metal 219 in contact with the guard ring, and a second metal 220 arranged in contact with the first metal and having a lower standard potential than that of the first metal. A ratio of a contact area with the protection film of the first metal to a contact area with the protection film of the second metal is lower than or equal to 0.05.SELECTED DRAWING: Figure 2
Inventors:
FURUKAWA TOMOYASU
KAWASE DAISUKE
KAWASE DAISUKE
Application Number:
JP2020090325A
Publication Date:
December 09, 2021
Filing Date:
May 25, 2020
Export Citation:
Assignee:
HITACHI POWER SEMICONDUCTOR DEVICE LTD
International Classes:
H01L29/06; H01L21/28; H01L21/336; H01L29/41; H01L29/739; H01L29/78
Attorney, Agent or Firm:
Polaire Patent Business Corporation
Previous Patent: Cooling structure of electronic equipment
Next Patent: Manufacturing method of light emitting element
Next Patent: Manufacturing method of light emitting element