Title:
半導体素子、半導体装置および電力変換器
Document Type and Number:
Japanese Patent JP4955128
Kind Code:
B2
Abstract:
A semiconductor element 100 including an MISFET according to the present invention is characterized by having diode characteristics in a reverse direction through an epitaxial channel layer 50. The semiconductor element 100 includes a semiconductor layer 20 of a first conductivity type, a body region 30 of a second conductivity type, source and drain regions 40 and 75 of the first conductivity type, an epitaxial channel layer 50 in contact with the body region, source and drain electrodes 45 and 70, a gate insulating film 60, and a gate electrode 65. If the voltage applied to the gate electrode of the MISFET is smaller than a threshold voltage, the semiconductor element 100 functions as a diode in which current flows from the source electrode 45 to the drain electrode 70 through the epitaxial channel layer 50. The absolute value of the turn-on voltage of this diode is smaller than that of the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer.
Inventors:
Kouichi Hashimoto
Kazuhiro Adachi
Osamu Kusumoto
Masao Uchida
Kazama Shun
Kazuhiro Adachi
Osamu Kusumoto
Masao Uchida
Kazama Shun
Application Number:
JP2011527567A
Publication Date:
June 20, 2012
Filing Date:
August 09, 2010
Export Citation:
Assignee:
Panasonic Corporation
International Classes:
H01L29/78; H01L21/336; H01L27/04; H01L29/12; H02M1/08; H02M7/5387
Domestic Patent References:
| JP2009065185A | ||||
| JP2004111614A | ||||
| JP9502335A | ||||
| JP2001186780A | ||||
| JP7142722A | ||||
| JP8274608A | ||||
| JP2001145369A |
Foreign References:
| WO2010125819A1 |
Attorney, Agent or Firm:
Seiji Okuda
Osamu Kita
Hidetaka Okabe
Akiko Miyake
Misato Yamaguchi
Osamu Kita
Hidetaka Okabe
Akiko Miyake
Misato Yamaguchi