Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2022080592
Kind Code:
A
Abstract:
To provide a semiconductor device capable of reducing a steady loss and a switching loss.SOLUTION: A gate electrode 17 is arranged in a state of being separated in one direction in a predetermined cross section along one direction of a surface direction in a semiconductor substrate 10 and a thickness direction, and a gate insulation film 16 is a part arranged at a bottom surface of a trench 15 in the predetermined cross section and a part between gate electrodes separated in the one direction is exposed from the gate electrode 17. Then, in this predetermined cross section, an inter-layer insulation film 18 is provided which is arranged in a state of embedding a space between the gate electrodes 17 separated in the one direction while covering the gate insulation film 16 exposed from each gate electrode 17 and arranged at the bottom surface of the trench 15.SELECTED DRAWING: Figure 1
Inventors:
KATO TAKEHIRO
Application Number:
JP2020191739A
Publication Date:
May 30, 2022
Filing Date:
November 18, 2020
Export Citation:
Assignee:
DENSO CORP
MIRISE TECH CORP
TOYOTA MOTOR CORP
MIRISE TECH CORP
TOYOTA MOTOR CORP
International Classes:
H01L29/78; H01L21/336; H01L29/12; H01L29/739
Attorney, Agent or Firm:
Patent Business Corporation Yuai Patent Office