Title:
半導体装置およびその製造方法
Document Type and Number:
Japanese Patent JP4784641
Kind Code:
B2
Abstract:
A semiconductor device includes a sensor portion, a cap portion, and an ion-implanted layer. The sensor portion has a sensor structure at a surface portion of a surface. The cap portion has first and second surfaces opposite to each other and includes a through electrode. The surface of the sensor portion is joined to the first surface of the cap portion such that the sensor structure is sealed between the sensor portion and the cap portion. The ion-implanted layer is located on the second surface of the cap portion. The through electrode extends from the first surface to the second surface and is exposed through the ion-implanted layer.
Inventors:
Kazuhiko Sugiura
Tetsuo Fujii
Hisanori Yokura
Tetsuo Fujii
Hisanori Yokura
Application Number:
JP2008326672A
Publication Date:
October 05, 2011
Filing Date:
December 23, 2008
Export Citation:
Assignee:
株式会社デンソー
International Classes:
H01L29/84; G01C19/56; G01C19/5656; G01C19/5663; G01C19/5769; G01P15/08; G01P15/125
Domestic Patent References:
| JP2008294229A | ||||
| JP2003329704A | ||||
| JP2008256496A | ||||
| JP2007524995A | ||||
| JP2002273699A | ||||
| JP2003326500A | ||||
| JP2009085822A |
Foreign References:
| WO2008078770A1 |
Attorney, Agent or Firm:
Yoji Ito
Takahiro Miura
Fumihiro Mizuno
Takahiro Miura
Fumihiro Mizuno