Title:
半導体装置及びその製造方法
Document Type and Number:
Japanese Patent JP5717706
Kind Code:
B2
Abstract:
According to one embodiment, a semiconductor device includes a gate electrode formed on a substrate with a gate insulation film interposed therebetween, and a source region of a first conductivity type and a drain region of a second conductivity type reverse to the first conductivity type, which are formed so as to hold the gate electrode therebetween within the substrate. The work function of a first region on the source region side within the gate electrode is shifted toward the first conductivity type as compared to the work function of a second region on the drain region side within the gate electrode.
Inventors:
Masakazu Goto
Application Number:
JP2012213834A
Publication Date:
May 13, 2015
Filing Date:
September 27, 2012
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/336; H01L21/265; H01L21/266; H01L21/28; H01L29/423; H01L29/49; H01L29/66; H01L29/78
Domestic Patent References:
| JP11220122A | ||||
| JP5041520A | ||||
| JP2011100967A |
Foreign References:
| US20120223387 |
Attorney, Agent or Firm:
Hirohito Katsunuma
Yasukazu Sato
Yasushi Kawasaki
Takeshi Sekine
Akaoka Akira
Takayuki Shigeno
Yasukazu Sato
Yasushi Kawasaki
Takeshi Sekine
Akaoka Akira
Takayuki Shigeno