Title:
半導体装置とその製造方法
Document Type and Number:
Japanese Patent JP6492681
Kind Code:
B2
Abstract:
A method of manufacturing a semiconductor device includes: forming an insulating film above a semiconductor substrate; forming a conductive film on the insulating film; forming a dielectric film on the conductive film; forming a plurality of upper electrodes at intervals on the dielectric film; forming a first protective insulating film on the upper electrodes and the dielectric film by a sputtering method; forming a second protective insulating film on the first protective insulating film by an atomic layer deposition method, thereby filling gaps of a grain boundary of the dielectric film with the second protective insulating film; and patterning the conductive film after the second protective insulating film is formed to provide a lower electrode.
Inventors:
Yoichi Okida
Ito Eiki
Bunsei Wang
Ito Eiki
Bunsei Wang
Application Number:
JP2015008640A
Publication Date:
April 03, 2019
Filing Date:
January 20, 2015
Export Citation:
Assignee:
Fujitsu Semiconductor Limited
International Classes:
H01L21/316; H01L27/11507
Domestic Patent References:
| JP2012038906A | ||||
| JP2010003741A | ||||
| JP11289057A | ||||
| JP2003273332A | ||||
| JP2007251210A |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito