Title:
半導体装置およびその製造方法
Document Type and Number:
Japanese Patent JP6870546
Kind Code:
B2
Abstract:
A semiconductor device comprises: a cell region that includes a semiconductor element; an outer peripheral region that surrounds an outer periphery of the cell region; a substrate that has a front surface and a back surface, and is made of a semiconductor of a first or second conductivity type; a first conductivity layer that is formed on the front surface of the substrate and made of the semiconductor of the first conductivity type having a lower impurity concentration than impurity concentration of the substrate; a first electrode that is provided on an opposite side of the substrate across the first conductivity layer, the first electrode being provided in the semiconductor element; and a second electrode that is placed toward the back surface of the substrate, the second electrode being provided in the semiconductor element.
Inventors:
Noboru Masato
Masayasu Ishiko
Jun Saito
Masayasu Ishiko
Jun Saito
Application Number:
JP2017176776A
Publication Date:
May 12, 2021
Filing Date:
September 14, 2017
Export Citation:
Assignee:
株式会社デンソー
株式会社豊田中央研究所
株式会社豊田中央研究所
International Classes:
H01L29/06; H01L21/336; H01L29/12; H01L29/78
Domestic Patent References:
| JP2014170778A | ||||
| JP2015076592A | ||||
| JP2008004643A | ||||
| JP2015153787A | ||||
| JP2016066780A |
Foreign References:
| EP3012870A1 |
Attorney, Agent or Firm:
Patent Business Corporation Yuai Patent Office