Title:
SEMICONDUCTOR DISTORTED QUANTUM WELL LASER
Document Type and Number:
Japanese Patent JPH06275909
Kind Code:
A
Abstract:
PURPOSE: To establish new logic of forecasting a band offset value and provide a laser which always has a type-one distorted quantum well structure based on the logic.
CONSTITUTION: A semiconductor distorted quantum well laser is provided with an Al0.25Ga0.22In0.53As beam confining layer 23A which is laminated on an n-InP substrate, an In0.2Ga0.8As well layer 23B, an Al0.25Ga0.22In0.53As barrier layer 23C, an In0.2Ga0.8As well layer 23D and an Af0.25Ga0.22In0.53As beam confining layer 23E. The In0.2Ga0.8As well layer 23B, In0.2Ga0.8As well layer 23D, etc. are provided with an activating layer 23 which is constituted of a distorted quantum well to which tensile strain is applied in the inter-plane direction.
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Inventors:
SUGAWARA MITSURU
Application Number:
JP6027793A
Publication Date:
September 30, 1994
Filing Date:
March 19, 1993
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01S5/00; (IPC1-7): H01S3/18
Attorney, Agent or Firm:
Shoji Kashiwaya (1 person outside)